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With BJTs, we can control base current using Vin (from diagram). Why do textbooks state that BJTs are current controlled when it's obvious that changing the voltage controls the current through the collector? enter image description here

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could you please post the jpg as a png and use the image tool? Or draw the circuit with the circuit editing tool? – laptop2d 21 hours ago
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Just to complicate your life, a BJT isn't current controlled. See full set of simplified DC-only Ebers-Moll model equations here (injection, transport, and non-linear hybrid-pi): electronics.stackexchange.com/questions/252197/… – jonk 21 hours ago
    
    
good grief... in circuits like those depicted in the drawing, nobody is thinking about Ebers-Moll or Hybrid-pi models. You pretty much have to be doing AVLSI to be concerned with that stuff. – vicatcu 16 hours ago
    
@Raj, remove R1, and then we'll see that the interior of a BJT is indeed controlled by Vbe. But that design approach is mostly for discrete diff-amp designs (such as the inside of modern DC-coupled audio amplifiers.) Instead we can ignore the interior BJT physics, and pretend that Ib determines Ic directly, even though it really doesn't. This also avoids having to deal with any nonlinear xfer functions produced by diode junctions. – wbeaty 8 hours ago

10 Answers 10

In the above circuit Vin is controlling the current going to the base, not the voltage drop across the base and emitter of the transistor itself.

The voltage drop across Vbe will always be around 0.7V for Vin > 0.7; the excess voltage will be dropped across the R1.

By changing Vin, you are actually controlling the current going to the base based on the equation:

$$I_B = (Vin-0.7V)/R1$$

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Nitpick: the voltage drop across Vbe will always be around whatever the datasheet says, which could be as low as 0.3V for some BJTs. – Dmitry Grigoryev 20 hours ago
    
@DmitryGrigoryev You are correct. I was trying to keep things simple to not add any confusion. – mmize 20 hours ago
    
Sorry. I was trying to keep it simple by ignoring this voltage entirely in my answer, but comments got me started ;) – Dmitry Grigoryev 20 hours ago
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What really happens is the following: R1 realizes - together with the base-emitter path - a voltage divider. And the signal voltage Vin causes a corresponding voltage drop across the B-E path which controls the collector current. Hence, it is NOT the base current Ib which determines Ic. Just the opposite is true: Ib and Ic are both caused by Vbe. – LvW 19 hours ago

A BJT isn't current-controlled, but, to a useful approximation, it behaves that way. Under more accurate models of the BJT, like Ebers-Moll, the collector current isn't a function of the base current but of the base voltage (\$V_{BE}\$).

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It's so useful an approximation that any BJT datasheet you will ever look at will characterize beta. – vicatcu 21 hours ago
    
Yes - beta is specified. So what ? From this fact, do you really derive that the BJT would controlled by the base current ? Or do you have some other arguments? I doubt. – LvW 20 hours ago
    
@vicatcu Beta is not only frequency dependent but bias and current dependent. It's a wild approximation to give component users a place to start from. – horta 20 hours ago
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@vicatcu Devices can be characterized in any number of ways, including parameters that are fictitious, or functions of other, more primary parameters. – Kaz 19 hours ago
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@Kaz: I think it's wrong to say a BJT is not current controlled just because the base current can be expressed as a function of base-emitter voltage. Actually it is current controlled because physically the base current matters. Otherwise you could also say a BJT is temperature controlled instead of current controlled... – Curd 18 hours ago

I think you got it backwards. \$V_{in}\$ is controlling \$I_{B}\$ via Ohm's law (assuming the voltage drop on the base is small): \$I_{B} = V_{in}/ R_1\$. The BJT is in turn controlled by this current: \$I_C = \beta \cdot I_B\$.

In the end there is a linear relationship between \$V_{in}\$ and \$I_C\$, but this is only true for as long as \$R_1\$ remains constant. Since \$R_1\$ is not part of the BJT, you cannot assume anything about it when discussing BJT characteristics, and you cannot say the BJT is controlled by \$V_{in}\$.

Perhaps an example would explain it better. Imagine I drive a car, and its speed depends on how hard I push the gas and for how long. But I don't want to get any fines, so I always respect speed limits. Now you come along and say:

Why do they say cars are controlled by gas pedal, when in reality their speed depends on flat metal objects with numbers painted on them?

So what you say is true in this particular case, but that doesn't change the fact that cars don't care in the slightest about flat metal objects in their surroundings.

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so R1 is varying u say – Raj 21 hours ago
    
The voltage drop on the base is typically 0.6-0.7V – vicatcu 21 hours ago
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R1 is external to the BJT I say. – Dmitry Grigoryev 21 hours ago
    
@vicatcu I'd say it's typically 0.3-0.7V, and yeah, that's what I call small for the sake of simplicity. – Dmitry Grigoryev 21 hours ago
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@horta I tried to make my quote more international-friendly. – Dmitry Grigoryev 18 hours ago

Let's start with a little digression: what makes a generator a current generator instead of a voltage generator? Look at the V-I characteristics: the one with mostly constant voltage (almost horizontal in the I-V plane) will be called a voltage generator, the one with mostly constant current (almost horizontal in the V-I plane) will be called current generator. This is because the 'accent' is on the constant quantity (the voltage or current supplied - the other variable depends on the load and the compliance of the generator).

In a controlled device, the accent is on the variable quantity. Given the exponential input characteristic, that leaves Vbe almost constant, it is current you like to see as the controlling variable.

You should also ask yourself why you need a base resistor. Try to control the BJT by removing that resistor and by supplying a pure voltage (that is voltage from an ideal generator) between base and emitter. Not so easy, uh? (Conversely, with a MOSFET you'll have trouble in trying to use a current generator...)

The bottom line is that it's easier to distinguish between 10 e 40 uA than it is to separate 0.65386 and 0.65389 V.

Note: The dependence on Vbe shown in the Ebers-Moll model is not implying a cause-effect relationship. It's just simpler to write the equations in that way. Nobody forbids you from using inverse functions.

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In general you could imagine the BJT to be a current-controlled current source when finding the bias point in a linear application (large signal). \$I_C=\beta I_B\$

It's more useful to think of it as a voltage-controlled current source when you are doing small-signal analysis, such as for an amplifier- using the hybrid pi model.

enter image description here

Neither is particularly useful when you are evaluating switching applications since the base current will be high enough that the collector current is determined by the external circuit and not by the transistor characteristics (the first helps somewhat in ensuring that condition exists).

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Spehro Pefhany, regarding your first sentence: I think, for bias point determination we must not "in general" imagine that the BJT would be current controlled. The classical biasing method using a voltage divider at the base node is certainly based on the voltage-control view. – LvW 18 hours ago
    
@LvW If you consider Vbe fixed at 0.6 or 0.7V and evaluate the voltage drop from the divider based on Ic and \$\beta\$ you'll get the right answer, close enough for most purposes. – Spehro Pefhany 17 hours ago
    
Art of Electronics II goes into this issue in depth, giving examples of design fails caused by "the hfe-think" taught by most other texts. The main issue is the variability of hfe among transistors, and across large temperature range. Relying on hfe is fine for one-off hobbyist designs that remain at 20C deg. But in a mass produced product with transistor hfe between 80-300, and automotive temp range, most will fail unless hfe effects can be removed (removed using voltage-based design philosophy common to op-amp innards.) – wbeaty 8 hours ago
    
@wbeaty: whats up with the BJT physics crusade? The OP asked why it is considered a current controlled device, not SHOULD it be considered a current controlled device. Plus the answer mentions this is for large signal analysis. – jbord39 1 hour ago
    
@wbeaty It's not uncommon to specify the beta bin more closely in volume production. For example, C1815Y (was very popular in Japanese designs) has 120-240 range. – Spehro Pefhany 40 mins ago

If you made Vin a constant and R1 a variable would you say BJT's are resistance controlled devices?

In your setup you appear to have control of a voltage and observe it is able to effect the collector current. It's reasonable to use this as proof this circuit's current is voltage controlled, but it's not reasonable to say this means that all BJT's are voltage controlled.

You have to make a distinction between the whole system and a component in the system, even when it's the most interesting component or even the only interesting looking one.

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Regarding the problem of control it is important to distinguish between (1) the "naked" transistor (voltage-controlled transconductance device) and (2) a working circuit, which consists of the BJT and surrounding resistors. Such a circuit can (can, but not necessarily) be seen as current controlled. This is the case when in the above example the series resistor R1 is very large if compared with the transistors input resistance at the base node. – LvW 18 hours ago

I think it makes sense to call a BJT current controlled when you compare it to the MOSFET.

The MOSFET has a gate, and the higher the voltage on the gate (which draws essentially no current), the higher the conductance from drain->source. So, this is a voltage controlled device.

Alternatively,

A BJT has a base. If you pump current into the base, the there is conductance from collector to emitter. Sure, this current is generated from a voltage somewhere, but you cannot power a BJT without current.

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Sorry - this is not a correct description of the working principle of the BJT. Have you ever heard about Shockley`s exponential equation Ic=f(Vbe)? Do you know that the transconductance gm=d(Ic)/d(Vbe) is the key parameter for the amplification process? Do you know that two different transistors with different beta values (100 and 200) will provide the same voltage gain (identical quiescent current Ic)? – LvW 18 hours ago
    
@LvW I think the point jbord39 is making is that you can't have voltage without current and vice versa. Therefore, by the strictest definition, nothing can truly be a current or voltage controlled device (alone). Therefore he/she's trying to answer the question of why textbooks even bother to make the distinction. A BJT's output is very much dependent on the input current unlike a MOSFET, which is I'm assuming why textbooks state that certain devices are current or voltage controlled (when in reality that's never truly the case). – horta 18 hours ago
    
horta, it is simply not true that the BJT`s output is "very much dependent on the input current". Each reliable (!!!) book and home pages from leading US univesities can tell you the opposite. Nobody denies that a base current does exist but it can be seen simply as a "nuisance or a defect" (as mentioned by the well-known BJT specialist Barrie Gilbert). – LvW 17 hours ago
    
@horta: Thanks, yes that is my point. – jbord39 17 hours ago
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@LvW electronics.stackexchange.com/questions/201533/… Since voltage and current in devices don't exist without eachother, you cannot say that the BJT is truly a voltage-controlled device. Even the Ebers-Moll model is nothing more than a model (an approximation that humans use to abstract away messy details of the real world). – horta 17 hours ago

Other answers have expressed opinions on whether the BJT is voltage controlled or current controlled or both. In my answer, I wish to address instead this:

when it's obvious that changing the voltage controls the current through the collector?

Consider the following alternative circuit:

schematic

simulate this circuit – Schematic created using CircuitLab

Is it not obvious that

$$I_C = \beta_{DC}I_B$$

and

$$i_c = \beta_{ac}i_b$$

and thus that the base current controls the current through the collector?

Yes, you might object that changing \$I_B\$ necessarily changes \$V_{BE}\$ etc. but that is a two-edged sword since the objection works both ways, i.e., a change in \$V_{BE}\$ necessarily changes \$I_B\$.

So no, it's not obvious, by your example, that the BJT is voltage controlled.

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The collector current is, by definition / physics, a function of the base current (and implicitly the load current demand). The governing formula of a BJT is \$I_C = \beta \cdot I_C\$. Where \$\beta\$ is the gain, \$I_B\$ is the current through the base-emitter junction, and \$I_C\$ is the (maximum) current through the collector-emitter junction.

The base voltage (i.e. the voltage measured at the base terminal with respect to GND) is actually more or less a constant (at least in saturation), as characteristic of a diode forward voltage drop.

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how do you change base current? – Raj 21 hours ago
    
\$I = \frac{V}{R}\$ ... – Majenko 21 hours ago
    
so you have to either change v or r but R is const so V is changing so voltage controlling base current that's my doubt – Raj 21 hours ago
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It`s interesting - a wrong answer gets one point. Perhaps, becaus the answer was so simple? (“I think it's much more interesting to live not knowing than to have answers which might be wrong.” R. Feynman). – LvW 20 hours ago
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vicatcu - are you sure to be right? Are you aware that you are completely wrong? The key parameter for amplification is the transconductance gm which is the SLOPE of the exponential curve Ic=f(Vbe). What makes you think that Vbe is a constant? My recommendation: Consult a reliable textbook before giving false answers. – LvW 20 hours ago

Up to now, I count 10 answers and a lot of comments. And again I have learned that the question if the BJT is voltage- or current controlled seems to be a question of religion. I am afraid, the questioner („Why do textbooks state that BJTs are current controlled“) will be confused because of so many different answers. Some are correct and some are totally wrong. Therefore, in the interest of the questioner I like to summarize and clarify the situation.

1) What I never will understand is the following phenomenon: There is not a single proof that the collector current Ic of a BJT would be controlled/determined by the base current Ib. Nevertheless, there are still some guys (even engineers!) which again and again repeat that the BJT - in their view - would be current-controlled. But they only repeat this assertion without any proof - no surprise, because there is no proof and no verification.

The only „justification“ is always the simple relation Ic=beta x Ib. But such an equation can never tell us anything about cause and effect. More than that, they forget/ignore how this equation was originally derived: Ic=alpha x Ie and Ie=Ic+Ib. Hence, Ib is just a (small) part of Ie - nothing else.

2) In contrast, there are many observable effects and ciruit properties which clearly show and proof that the BJT is voltage-controlled. I think, everybody who knows how a simple pn diode works should also recognize what a diffusion voltage is and how an external VOLTAGE can reduce the barrier effect of this fundamental property of the pn junction.

We must apply a proper VOLTAGE across the corresponding terminals to allow a current through the depletion zone. This voltage (resp. the corresponding electrical field) is the only quantity which delivers the force for the charged carrier movement, which we call current! Is there any reason that the base-emitter pn junction should behave completely different (and does NOT react upon the voltage) ?

Upon request I can list at least 10 effects and circuit properties which can be explained solely with voltage control. Why are these observations so often ignored?

3) The questioner has presented a circuit which deserves an additional comment. We know that an opamp (undoubtly voltage driven) can be wired as a current-in-voltage-out amplifier (transresistance amplifier). That means: We always have to distinguish between the properties of the „naked“ amplifier unit and a complete circuit with additional parts.

For the present case, that means: The BJT as a stand-alone part is voltage-driven - however, viewing the whole circuit (with a resistor R1) we can treat the complete arrangement as current driven circuit if R1 is much larger than the input resistance of the B-E path. In this case, we have a voltage divider driven by the voltage Vin.

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Try driving a BJT base without current (bias or otherwise) and tell me how it works out for you buddy. Alternatively a MOSFET draws no gate bias current. Hence the distinction. – jbord39 1 hour ago
    
Ok, let's try this way. Use a simplified diode model, with a piecewise linear charateristic: I=0 for V<Vth and vertical V-I characteristic for V>=Vth. Use this model for the B-E diode: that means Vbe has a constant value. How do you voltage control that? – Sredni Vashtar just now

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